Difference of parasitic bipolar action undergoing HBM testing in low-voltage and high-voltage LDMOS (Toshiba’s test results)

Difference of parasitic bipolar action undergoing HBM testing in low-voltage and high-voltage LDMOS (Toshiba’s test results)
 

In low-voltage LDMOS, lateral parasitic bipolar action is dominant.
In high-voltage LDMOS, vertical parasitic bipolar action is dominant.



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