Toshiba Electronic Devices & Storage Corporation ("Toshiba”) has launched 10 products in its lineup of new generation 80 V N-channel power MOSFET “U-MOSⅩ-H series” suitable for switching power supplies of industrial equipment. Three package types are available: “TK2R4E08QM, TK3R3E08QM, TK5R3E08QM and TK7R0E08QM” using TO-220, a through-hole type; “TK2R4A08QM, TK3R2A08QM, TK5R1A08QM and TK6R8A08QM” using TO-220SIS, an isolated through-hole type; and “TK5R1P08QM and TK6R9P08QM” using DPAK, a surface mount type.

By adopting the new generation U-MOSⅩ-H process with a low-voltage trench structure, the new products feature industry-leading[1] low drain-source On-resistance. This reduces conduction loss, helping reduce the power consumption of equipment. In addition, they have inherited the low gate switch charge characteristics from the existing generation process U-MOSVIII-H. This reduces the values of drain-source On-resistance x gate switch charge[2], a figure of merit for switching applications.

Notes:
[1] Among products with the same rating, as of February, 2021. Toshiba survey.
[2] Compared with TK100E08N1 (U-MOSVIII-H series), TK2R4E08QM has reduced its "typical drain-source On-resistance × typical gate switch charge" by about 8 %.

Features

 
  • Industry’s lowest level[1] On-resistance :
       RDS(ON)=2.44 mΩ (max) @VGS=10 V (TK2R4E08QM)
  • Low charge (output and gate switch)
  • Low gate voltage drive (6 V drive)

Applications

 
  • Switching power supplies for industrial equipment
      (High efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
  • Motor control equipment (Motor drivers, etc.)

Product Specifications

(Unless otherwise specified, @Ta=25 °C)

Part
number
Absolute
maximum
ratings
Drain-source
On-resistance
RDS(ON)
max
(mΩ)
Total
gate
charge
Qg
typ.
(nC)
Gate
switch
charge
QSW
typ.
(nC)
Output
charge
Qoss
typ.
(nC)
Input
capacitance
Ciss
typ.
(pF)
Packages
Drain-
source
voltage
VDSS
(V)
Drain
current
(DC)
ID
(A)
@Tc=
25 °C
@VGS=
10 V
@VGS=
6 V
TK2R4E08QM 80 120 2.44 3.2 178 52 210 13000 TO-220
TK3R3E08QM 120 3.3 4.2 110 31 119 7670
TK5R3E08QM 120 5.3 7.3 55 17 66 3980
TK7R0E08QM 64 7.0 9.7 39 11.6 46 2700
TK2R4A08QM 100 2.44 3.1 179 54 210 13000 TO-220SIS
TK3R2A08QM 92 3.2 4.1 102 31 119 7670
TK5R1A08QM 70 5.1 4.1 54 17 66 3980
TK6R8A08QM 58 6.8 9.5 39 13 46 2700
TK5R1P08QM 84 5.1 7.0 56 17 66 3980 DPAK
TK6R9P08QM 62 6.9 9.6 39 11.6 46 2700

Internal Circuits

The illustration of internal circuits of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM.

Application Circuit Examples

The illustration of application circuit examples of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM.
The illustration of application circuit examples of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM.


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