Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a 1100 V discrete IGBT, “GT30J110SRA,” to be used for home appliances such as IH rice cookers and microwave ovens using voltage resonance circuits with AC100 V input.

The new product GT30J110SRA has improved characteristics, featuring lower loss, short-circuit current suppression, a wider safe operating area and lower radiated emissions than the existing product[1].

Lower loss is offered by reducing turn-off switching loss and diode conduction loss. It's possible to use smaller gate drive resistance than the past by reducing radiation noise. Its typical turn-on time[2] is 0.2 μs, about 20 % reduction from the existing product[1], and its typical turn-off time[2] is 0.33 μs, about 29 % reduction. The diode typical forward voltage[3] is 1.40 V which is about 33 % reduction, helping reduce the power consumption of the equipment.

Short-circuit current suppression is offered by reducing saturation current. This can reduce the short- circuit current of a resonance capacitor during equipment start-up. The peak value of the typical saturation current of the new product is 200 A, about 40 % reduction from the existing product[1], while its collector-emitter saturation voltage is equivalent to that of the existing product[1] for 60 A or lower.

Its wide safe-operating area has been extended on the high voltage side compared with the existing product[1], making the product less likely to break down.

Low radiated emissions[4] are offered by optimizing its chip structure. Its radiated emissions are 35.8 dBμV/m at around 30 MHz where the radiated emissions level is the strongest, about 10 dBμV/m reduction from the existing product[5].

[1] Existing product GT60PR21
[2] @VCE=600 V, IC=60 A, VGE=+15 V, Ta=25 °C
[3] @IF=30 A, VGE=0 V, Ta=25 °C
[4] Values measured by Toshiba. 
[5] Existing product GT40QR21

Features

 
  • 6.5th generation
  • Built-in diode by RC structure
  • Low diode forward voltage : VF=1.40 V (typ.) @IF=30 A, Ta=25 °C

Applications

 

Voltage resonance for home appliances

  • IH rice cooker
  • IH cooking heater
  • Microwave oven, etc.

Product Specifications

(Unless otherwise specified, @Ta=25 °C)

Part
number
Package Absolute maximum ratings Collector-
Emitter
saturation
voltage
VCE(sat)
typ.
(V)
Diode
forward
voltage
VF
typ.
(V)
Switching
time
(fall time)
tf
typ.
(µs)
Junction-
to-case
thermal
resistance
Rth(j-c)
max
(°C/W)
Collector
-emitter
voltage
VCES
(V)
Collector
current (DC)
IC
(A)
Junction
temperature
Tj
(°C)
@Tc=
25 °C
@Tc=
100 °C
@IC=30 A,
VGE=15 V
@IF=30 A,
VGE=0 V
GT30J110SRA TO-3P(N) 1100 60 30 175 1.60 1.40 0.17 0.48

Internal Circuit

The illustration of internal circuit of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.

Application Circuit Example

The illustration of application circuit example of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage. 
Providing these application circuit examples does not grant any license for industrial property rights.

Characteristics Curves

The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
  • The new product features a diode forward voltage[3] of typical 1.40 V at 25 °C and 30 A, about 33 % reduction from the existing product[1], helping reduce the power consumption of the equipment.
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
  • The new product has changed the chip design to reduce the capacitor short-circuit current generated during startup for voltage resonance compared with the existing product[1]. The collector current is suppressed to 150 to 200 A at TC=25 °C and VGE=15 V. Its collector-emitter saturation voltage is also equivalent to that of the existing product[1] for 60 A or lower.
 
  • The new product offers better trade-off characteristics with a wide gate resistance range compared to the existing product[1].
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.
The illustration of characteristics curves of a discrete IGBT that helps reduce the power consumption and radiated emission of home appliances : GT30J110SRA.


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