MOSFET: metal-oxide-semiconductor field-effect transistor
 Schottky barrier diode: A semiconductor diode formed by the junction of a semiconductor with a metal.
 Toshiba defines reliability as a change in on-resistance when a current is applied from the source to the drain of a device at a current density of 250 A/cm2 for 1,000 hours. On-resistance changes by as much as 43% for Toshiba’s typical MOSFET, but it changes by only 3% in an SBD-embedded MOSFET.
 PN diode: A diode formed by the pn junction between the source and drain.