Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched four 650 V Schottky Barrier Diode (SBD) products to expand its lineup : “TRS12N65FB,” “TRS16N65FB,” “TRS20N65FB,” and “TRS24N65FB” that use SiC (Silicon Carbide), a new material allowing higher efficiency of power supply PFCs (Power Factor Corrections). They use the TO-247 package and offer four forward DC current ratings (Both Legs) - 12 A, 16 A, 20 A, and 24 A - supporting increase of power of equipment.
The new products are Toshiba’s second-generation SiC SBDs with the improved JBS (Junction Barrier controlled Schottky) structure. They feature high surge current capability and low-loss characteristics, with a non-repetitive peak forward surge current rating (Per Leg) of 92 A[1], about 53 %[2] improvement, and typical forward voltage (Pre Leg) of 1.45 V, about 6 %[2] reduction compared with our first-generation products. These features allow higher efficiency and larger margins in thermal design of equipment.

Toshiba will expand lineup in the future and contribute to higher efficiency and downsizing of communications equipment, servers, inverters, and other products.

Notes :
[1] Case of TRS24N65FB
[2] TRS24N65FB is compared with TRS24N65D

Features

Applications

Product Specifications

(Unless otherwise specified, @Ta=25 °C)

Part number TRS12N65FB TRS16N65FB TRS20N65FB TRS24N65FB
Packages TO-247
Absolute
maximum
ratings
Repetitive peak
reverse voltage
VRRM (V)
650
Forward DC
current
IF(DC) (A)
Both
Legs
12 16 20 24
Non-repetitive
peak forward
surge current
IFSM (A)
@t=10 ms
Per
Leg
52 65 79 92
Both
Legs
104 130 158 184
Junction temperature
Tj (°C)
175
Reverse current
IR typ. (μA)
@VR=650 V
Per
Leg
0.3 0.4 0.5 0.6
Forward voltage
VF typ. (V)
Per
Leg
  1.45
@IF (A) 6 8 10 12
Total junction
capacitive charge
Qcj typ. (nC)
@VR=0.1 to 400 V
Per
Leg
15 19.4 24 30
Thermal resistance
(junction-to-case)
Rth(j-c) max (°C/W)
@Tc=25 °C
Per
Leg
2.2 1.8 1.4 1.3
Both
Legs
1.1 0.9 0.7 0.65

Internal Circuit

The illustration of internal circuit of lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB.

Application Circuit Example

The illustration of application circuit example of lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB.

 



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