In 2015, ROHM began mass production of the industry-first trench-type SiC MOSFETs utilizing an original structure. Now, ROHM has successfully reduced ON resistance by 40% compared to conventional products without sacrificing short-circuit withstand time by further improving its original double trench structure.

2) Achieves lower switching loss by significantly reducing parasitic capacitance

Generally, lower ON resistances and larger currents tend to increase the various parasitic capacitances in MOSFETs, which can inhibit the inherent high-speed switching characteristics of SiC.

However, ROHM was able to achieve 50% lower switching loss over conventional products by significantly reducing the gate-drain capacitance (Cgd).