TOSHIBA SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F

The new products use second-generation improved JBS (Junction Barrier controlled Schottky) architecture, which reduces the figure of merit (VF?Qcj[1]) to approximately 67 %[2] over the first-generation for higher non-repetitive peak forward surge currents and lower forward voltage of up to 1.45 V, with a maximum of 97 A[3]. Because of these matters, new products are less breakable and have low power dissipation. And, by their high voltage and low power dissipation, the new SiC SBD products can operate under higher voltage or higher current than existing Si FRD[4] products that use same size package. The new products increase efficiency and margin of thermal design by decrements of heat dissipation which derives from their low power dissipation.

Toshiba will expand lineup in the future and contribute to higher efficiency and downsizing of communications equipment, servers, inverters, and other products.

Notes:
[1] Qcj : Total charges between 0.1 V and 400 V of inverse voltage of junction capacitance calculated from Cj-VR curve (as of November 2019)
[2] Comparison with TRS12E65C
[3] Case of TRS12E65F
[4] FRD (Fast Recovery Diode)

Features

High non-repetitive peak forward surge current :
IFSM=92 A (TRS12A65F)
IFSM=97 A (TRS12E65F)
Low reverse current : IR=0.6 μA (typ.)
Two types of packages :
Isolation type TO-220F-2L package (TRS12A65F)
Non-isolation type TO-220-2L package (TRS12E65F)

Applications

Power supplies for industrial equipment
(Base stations, PC servers, power supplying facilities for electric vehicles and laser beam machines, etc.)
Power supplies for consumer equipment
(Organic EL-TVs, audio amplifiers, projectors and multi-function printers, etc.)

Product Specifications

(Unless otherwise specified, @Ta=25 °C)

Part number			TRS12A65F	TRS12E65F
Packages			TO-220F-2L (Isolation type)	TO-220-2L (Non-isolation type)
Absolute maximum ratings	Repetitive peak reverse voltage VRRM (V)		650
	Forward DC current IF(DC) (A)		12
	Non-repetitive peak forward surge current IFSM (A)	@t=10 ms	92	97
	Junction temperature Tj (°C)		175
Reverse current IR typ. (μA)		@VR=650 V	0.6
Forward voltage VF typ. (V)		@IF=12 A	1.45
Total capacitive charge Qcj typ. (nC)		@VR=0.1 to 400 V	30[1]
Thermal resistance(junction-to-case) Rth(j-C) max (°C/W)			3.65	1.3

Internal Circuits

The illustration of internal circuit of SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F.

Application Circuit Example

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