東芝電子元件及存儲裝置株式會社推出四款新型的N溝道功率MOSFET,採用小型和表面黏貼的TSON Advance(WF)封裝,低導通電阻N溝道MOSFET的新產品並適用於車用設備。40 V “XPN3R804NC” ,  “XPN7R104NC,” 60 V “XPN6R706NC” , “XPN12006NC.”

新產品封裝使用 TSON Advance(WF) , 有助於自動目視檢查電路板的安裝條件。此外,採用東芝“ U-MOSVIII-H”工藝的低導通電阻產品有助於設備節能。這使我們能夠替代相同尺寸包裝的東芝傳統產品。通過替代類似的5×6 mm尺寸的產品,性能的提高還可有助於ECU的小型化。

產品特點

 
  • 通過AEC-Q101認證
  • 低導通電阻 :
        RDS(ON)=3.8 mΩ (max) @VGS=10 V (XPN3R804NC)
        RDS(ON)=7.1 mΩ (max) @VGS=10 V (XPN7R104NC)
        RDS(ON)=6.7 mΩ (max) @VGS=10 V (XPN6R706NC)
        RDS(ON)=12.0 mΩ (max) @VGS=10 V (XPN12006NC)
  • 小型且黏貼 TSON Advance(WF) 封裝: 3.3×3.6 mm (typ.)

應用

 

車用設備

  • Switching regulators (交換式穩壓器)
  • DC-DC converters
  • 馬達驅動

產品規格

(Unless otherwise specified, @Ta=25 °C)

Part number XPN3R804NC XPN7R104NC XPN6R706NC XPN12006NC
Polarity N-channel
Package Name TSON Advance(WF)
Size typ. (mm) 3.3×3.6
Absolute
maximum
ratings
Drain-source voltage VDSS (V) 40 40 60 60
Drain current (DC) ID (A) 40 20 40 20
Drain current (pulsed) IDP (A) 80 60 80 60
Channel temperature Tch (°C) 175
Thermal
characteristics
Channel-to-case
thermal impedance
Zth(ch-c) max (°C/W)
@Tc=
25 °C
1.5 2.3 1.5 2.3
Electrical
characteristics
Drain-source On-resistance
RDS(ON) max (mΩ)
@VGS=
4.5 V
7.8 14.2 13.3 23.7
@VGS=
10 V
3.8 7.1 6.7 12.0
Series U-MOSVIII-H

Internal Circuits

The illustration of internal circuits of 40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC.

Application Circuit Examples

The illustration of application circuit example of 40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC.
The illustration of application circuit example of 40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC.


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