TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added 80V N-channel power MOSFETs to its “U-MOS X-H series” fabricated with the latest generation process. The new MOSFETs are suitable for switching power supplies in industrial equipment used in data centers and communication base stations.
The expanded line-up includes "TPH2R408QM," housed in SOP Advance, a surface-mount type packaging, and "TPN19008QM," housed in a TSON Advance package. Shipments starts today.
Drain-source On-resistance in the new 80V U-MOS X-H products, manufactured with the latest generation process, is approximately 40% lower than that of 80V products in the current generation process U-MOS Ⅷ-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics has also been improved by optimizing device structure. As a result, the new products feature industry’s lowest power dissipation.
Toshiba is expanding its lineup of products that reduce power dissipation to help cut equipment power consumption.