Toshiba Introduces Cutting-edge Generation SOI Process for RF Switches and Low-Noise Amplifier ICs for 5G Smartphones

　　NF=0.48dB (min) @8GHz (Improved by about 0.3dB compared to TaRF10)

An LNA, RF switch and control circuit can be manufactured on a single chip.

Integrated development of the latest semiconductor processes and product development enables the early launch of high-frequency switch products

Main Specifications

Frequency (GHz)	Minimum NF of MOSFET for LNA (dB)
Frequency (GHz)	TaRF11	TaRF10
8.0	0.48	0.79
6.0	0.44	0.69
4.0	0.40	0.50