NF=0.48dB (min) @8GHz (Improved by about 0.3dB compared to TaRF10)
  •  An LNA, RF switch and control circuit can be manufactured on a single chip.
  •  Integrated development of the latest semiconductor processes and product development enables the early launch of high-frequency switch products
  • Main Specifications

    Frequency

    (GHz)

    Minimum NF of MOSFET for LNA

    (dB)

    TaRF11

    TaRF10

    8.0

    0.48

    0.79

    6.0

    0.44

    0.69

    4.0

    0.40

    0.50



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