TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released “XK1R9F10QB,” a 100V N-channel power MOSFET suitable for automotive 48V equipment applications such as load switches, switching power supplies and driving of motors. Shipments start today.

The new product is the first in Toshiba’s new U-MOS X-H Series of MOSFET with a trench structure, and is fabricated with the company’s latest[1] generation process. Mounted on a low-resistance TO-220SM(W) package, it delivers industry-leading low On-resistance[2], with a maximum On-resistance of 1.92mΩ, an approximate 20% reduction against the current “TK160F10N1L.” This advance helps to reduce equipment power consumption. It also delivers reduced switching noise, due to optimization of capacitance characteristics, which helps to reduce EMI[3] of equipment. In addition, the threshold voltage width is tightened to 1V to enhance switching synchronization when used in parallel.

Applications

 

Automotive equipment (Load switches, switching power supplies and motor drives, etc.)

Features

 
  • U-MOS X-H Series MOSFET with a trench structure
  • Industry-leading low On-resistance

  RDS(ON)=1.92mΩ (max) @VGS=10V

  • AEC-Q101 qualified

Main Specifications

(@Ta=25°C)

Part

Number

Polarity

Absolute maximum ratings

Drain-source

On-resistance

RDS(ON) max

(mΩ)

Channel-

to-case thermal impedance

Zth(ch-c)

max

(℃/W)

Package

Series

Drain-

source

voltage

VDSS

(V)

Drain current

(DC)

ID

(A)

Drain

current

(pulsed)

IDP

(A)

Channel temperature

Tch

(℃)

@VGS

=6V

@VGS

=10V

XK1R9F10QB

N-channel

100

160

480

175

3.31

1.92

0.4

TO-220SM(W)

U-MOS X-H



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