TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two new 100V N-channel power MOSFETs for automotive 48V electrical system applications. The line-up includes the low On-resistance “XPH4R10ANB,” which has a drain current of 70A, and the “XPH6R30ANB,” with a 45A drain current. Mass production shipments start today.

 

The new products are Toshiba’s first[1] 100V N-channel power MOSFETs in the compact SOP Advance (WF) package for automotive applications. The wettable flank terminal structure of the package allows its automatic visual inspection when mounted on a circuit board, which helps increase reliability. The low On-resistance of the new MOSFETS helps reduce equipment power consumption; and the XPH4R10ANB delivers industry-leading[2] low On-resistance.

Applications

Features

Main Specifications

(Unless otherwise specified, @Ta=25°C)

Part

Number

Polarity

Absolute maximum ratings

Drain-source

On-resistance

RDS(ON) max

(mΩ)

Channel-to-case thermal impedance

Zth(ch-c)

max

@Tc=25℃

(℃/W)

Package

Series

Drain-

source

voltage

VDSS

(V)

Drain current

(DC)

ID

(A)

Drain

current

(pulsed)

IDP

(A)

Channel temperature

Tch

(℃)

@VGS

=6V

@VGS

=10V

XPH4R10ANB

N-channel

100

70

210

175

6.2

4.1

0.88

SOP Advance(WF)

U-MOSVIII-H

XPH6R30ANB

45

135

9.5

6.3

1.13

U-MOSVIII-H



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