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4-Pin package (TO-247-4L) reduces switching loss by up to 35%
With conventional 3-pin packages (TO-247N), the effective gate voltage at the chip reduces due to the voltage dropped across the parasitic inductance of the source terminal. This causes the switching speed to reduce. Adopting the 4-pin TO-247-4L package separates the driver and power source pins, minimizing the effects of the parasitic inductance component. This makes it possible to maximize the switching speed of SiC MOSFETs, reducing total switching loss (turn ON and turn OFF) by up to 35% over conventional package.
The SCT3xxx xR series consists of SiC MOSFETs utilizing a trench gate structure. Six models are offered, featuring a breakdown voltage of either 650V (3 products) or 1200V (3 products).
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ROHM's SiC MOSFET evaluation board (P02SCT3040KR-EVK-001) is equipped with our gate driver ICs (BM6101FV-C) optimized for driving SiC devices along with multiple power supply ICs and additional discrete components that facilitate application evaluation and development. Compatibility with both the TO-247-4L and TO-247N package types enable evaluation of both packages under the same conditions. The board can be used for double pulse testing as well as the evaluation of components in boost circuits, 2-level inverters and synchronous rectification buck circuits.
Evaluation Board Part No: P02SCT3040KR-EVK-001
