TOKYO—In August, Toshiba Electronic Devices & Storage Corporation (“Toshiba”) will start mass production and shipments of “TPWR7904PB” and “TPW1R104PB”, 40V N-channel power MOSFETs for automotive applications. They are housed in the DSOP Advance(WF) packages that deliver double-sided cooling, low resistance, and small size.
The new products secure high heat dissipation and low On-resistance characteristics by mounting a U-MOS IX-H series chip, a MOSFET with the latest trench structure, into a DSOP Advance(WF) package. Heat generated by conduction loss is effectively dissipated, improving the flexibility of thermal design.
The U-MOS IX-H series also delivers lower switching noise than Toshiba’s previous U-MOS IV series, contributing to lower EMI. The DSOP Advance(WF) package has a wettable flank terminal structure.
|Part number||Absolute maximum ratings||
|Built-in Zener Diode between Gate-Source||Series||Package|
Drain- source voltage VDSS
Drain current (DC) ID
|TPWR7904PB||40||150||1.3||0.79||No||U-MOS IX-H||DSOP Advance(WF)L|
 EMI (Electromagnetic interference)
 Wettable flank terminal structure: A terminal structure that allows AOI (Automated Optical Inspection) of installation on boards.
 Be aware that the top plate has the same electric potential as the sources; however, not intended for an electrode.