Toshiba Electronic Devices & Storage Corporation

SSM6N357R 
 

TOKYO— Toshiba Electronic Devices & Storage Corporation today announced the launch of “SSM6N357R,” a new MOSFET with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays. Volume shipments start today.
 

SSM6N357R integrates a pull-down resistor, a series resistor and a Zener diode, which reduces the parts count and save on board space. Furthermore, since it is a dual-type package product (2 in 1), it has an approximately 42% smaller mounting area than the alternative of using two SSM3K357R (2.4 x 2.9 x 0.8 mm) single-type package products.
 

An industry-standard TSOP6F-class package, a low operating voltage of 3.0V and AEC-Q101 qualification make the SSM6N357R suitable for automotive and many other applications.
 

Applications

Features

Main Specifications

(@Ta=25℃)

Items Characteristics
Absolute maximum ratings Drain-source voltage
VDSS (V)
60
Gate-source voltage
VGSS (V)
±12
Drain current
ID (A)
0.65
Electrical Characteristics Drain-source on-resistance
RDS(ON) max (mΩ)
|VGS|=3.0V 2400
|VGS|=5.0V 1800
Total gate charge
Qg typ. (nC)
1.5
Input capacitance
Ciss typ. (pF)
43
Package TSOP6F 2.9mm×2.8mm;
t=0.8mm

Equivalent Circuits

Equivalent Circuits



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