Toshiba Electronic Devices & Storage Corporation Releases 100V N-Channel Power MOSFETs for Industrial Applications with the Industry’s Lowest-in-C

U-MOS IX-H N-channel power MOSFET series

TOKYO— Toshiba Electronic Devices & Storage Corporation has today started to ship “TPH3R70APL” and “TPN1200APL,” new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.

Fabricated with the company’s latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest-in-class On-resistance^[1]. In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower “R_DS(ON) × Q_oss”, On-resistance times output charge, and “R_DS(ON)× Q_SW”, On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications^[2].

Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio in line with market trends in order to help improve power supply efficiency.

Power supplies for industrial equipment
Motor control equipment

Industry’s lowest-in-class On-resistance^[1]
R_DS(ON)= 3.7mΩ (max) @ V_GS = 10V (TPH3R70APL)
R_DS(ON)= 11.5mΩ (max) @ V_GS = 10V (TPN1200APL)
Low output charge and low gate switch charge
Allows 4.5V logic level drive

(Unless otherwise specified, T_a=25℃)

Part number	Absolute maximum ratings		Drain-source On-resistance R_DS(ON) max (mΩ)		Total gate charge Q_gtyp. (nC)	Gate switch charge Q_sw typ. (nC)	Output charge Q_oss typ. (nC)	Input capacitance C_iss typ. (pF)	Package
Part number	Drain- source voltage V_DSS(V)	Drain current (DC) I_D @T_c = 25℃ (A)	@V_GS=10V	@V_GS=4.5V	Total gate charge Q_gtyp. (nC)	Gate switch charge Q_sw typ. (nC)	Output charge Q_oss typ. (nC)	Input capacitance C_iss typ. (pF)	Package
TPH3R70APL	100	90	3.7	6.2	67	21	74	4850	SOP Advance
TPN1200APL	100	40	11.5	20	24	7.5	24	1425	TSON Advance

Notes:

[1] As of December 18, 2017 for MOSFETs with equivalent ratings. Toshiba Electronic Devices & Storage Corporation survey.

[2] TPH3R70APL has 10% lower R_DS(ON) × Q_oss than the U-MOSVIII-H series TPH4R10ANL.

TPH3R70APL has 10% lower R_DS(ON) × Q_SW than the U-MOSVIII-H series TPH4R10ANL.

Applications

Features

Main Specifications