Toshiba Electronic Devices & Storage Corporation

Expanding the line-up of the low-voltage U-MOS IX-H power MOSFET series

U-MOS IX-H N-channel power MOSFET series 
 

TOKYO— Toshiba Electronic Devices & Storage Corporation has today started to ship “TPH3R70APL” and “TPN1200APL,” new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.
 

Fabricated with the company’s latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest-in-class On-resistance[1]. In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower “RDS(ON) × Qoss”, On-resistance times output charge, and “RDS(ON) × QSW”, On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications[2].
 

Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio in line with market trends in order to help improve power supply efficiency.
 

Applications

Features

Main Specifications

(Unless otherwise specified, Ta=25℃)

Part
number
Absolute
maximum ratings
Drain-source
On-resistance
RDS(ON) max
(mΩ)
Total
gate
charge
Qgtyp.
(nC)
Gate switch charge
Qsw typ.
(nC)
Output
charge
Qoss typ.
(nC)
Input
capacitance
Ciss typ.
(pF)
Package
Drain-
source
voltage VDSS(V)
Drain
current (DC)
ID
@Tc = 25℃
(A)
@VGS=10V @VGS=4.5V
TPH3R70APL 100 90 3.7 6.2 67 21 74 4850 SOP Advance
TPN1200APL 40 11.5 20 24 7.5 24 1425 TSON Advance

Notes:

[1] As of December 18, 2017 for MOSFETs with equivalent ratings. Toshiba Electronic Devices & Storage Corporation survey.

[2] TPH3R70APL has 10% lower RDS(ON) × Qoss than the U-MOSVIII-H series TPH4R10ANL.

TPH3R70APL has 10% lower RDS(ON) × QSW than the U-MOSVIII-H series TPH4R10ANL.

 


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