Delivers enhanced protection features and reduces mounting space

TOKYO—Toshiba Corporation’s (TOKYO: 6502) Storage & Electronic Devices Solutions Company today announced the launch of a new line-up of multi-bit, low-capacitance TVS diodes [1] for protecting high-speed interfaces from electronic discharge (ESD) and surge voltage. The new line-up covers four products that support interfaces, including USB Type-C™ and HDMI™ and that can be used in mobile devices, including smartphones, wearable devices and tablet PCs. The TVS diodes offer improved protection performance with lower dynamic resistance and lower clamp voltage, and are housed in small LGA packages [2] that requires approximately 30% less mounting space than Toshiba’s current products [3].

As electronic devices offer advances in high performance features while getting smaller in size, including smartphones, wearable devices, tablet PCs, notebook PCs, office equipment and LCD panels, the semiconductor products used in them have also been miniaturized. As a result, devices to protect semiconductors from ESD and surge voltage are increasingly required. Also, when used as protection for USB Type-C, HDMI and other high-speed interfaces, low-capacitance products also prevent attenuation of transmission signals.

Toshiba’s new products are TVS diodes with features and terminal layouts designed for protection of high-speed interfaces used in those cutting-edge electronic devices. They are fabricated with Toshiba’s proprietary EAP-IV process[4], which realizes lower dynamic resistance and clamp voltage than Toshiba’s current products [5] while enhancing overall protection by reducing ESD and surge voltage impacts on latter stage devices. The diodes are housed in small LGA-type packages, which require approximately 30% less mounting space than Toshiba’s current products [3]. The new line-up offers 4-bit and 2-bit products for both 3.3V and 5.0V signal lines, allowing users to select the product that matches the interface voltage of their system.

Line-up and Main Specifications

Part Number


(kV) [6]

VBR Min/Max

@8 to 16 A
(Ω) [7]
VC Typ.
@16 A
(V) [7]
Ct Typ.
DF5G5M4N 4-bit 3.6 ±20 4.0 / 6.0 0.8 22 0.2 DFN5
DF5G6M4N 4-bit 5.5 ±20 5.6 / 8.0 0.8 22 0.2
DF6D5M4N 2-bit 3.6 ±20 4.0 / 6.0 0.8 22 0.2 DFN6
DF6D6M4N 2-bit 5.5 ±20 5.6 / 8.0 0.8 22 0.2

[1] Transient Voltage Suppressor diodes (ESD protection diodes)

[2] The 4-bit products "DF5G5M4N" and "DF5G6M4N" are housed in a "DFN5" package which measures 1.3 x 0.8mm, while the 2-bit products "DF6D5M4N" and "DF6D6M4N" are housed in a "DFN6" package which measures 1.25 × 1.0mm.

[3] Toshiba’s 1-bit products

[4] Toshiba’s original ESD Array Process IV

[5] Approximately 20% reduction of dynamic resistance compared to Toshiba’s 4-bit "DF5G7M2N".

[6] (IEC61000-4-2) (Contact)

[7] TLP parameters: Z0 = 50Ω, tp = 100ns, tr = 300ps, averaging window: t1 = 30ns to t2 = 60 ns

*USB Type-C is a trademark or a registered trademark of the USB Implementers Forum.
*HDMI is a trademark or a registered trademark of HDMI Licensing, LLC.

Follow the link below for more on the new products and Toshiba TVS diodes.